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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 45* i d @ v gs = 12v, t c = 100c continuous drain current 35 i dm pulsed drain current 180 p d @ t c = 25c max. power dissipation 208 w linear derating factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 344 mj i ar avalanche current 45 a e ar repetitive avalanche energy 20.8 mj dv/dt peak diode recovery dv/dt 5.4 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. /1.6 mm from case for 10s) weight 9.3 (typical) g c a www.irf.com 1 200v, n-channel technology for footnotes refer to the last page pre-irradiation radiation hardened power mosfet thru-hole (low-ohmic to-254aa) to-254aa low-ohmic features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight esd rating: class 3a per mil-std-750, method 1020 international rectifier?s r6 tm technology provides superior power mosfets for space applications. these devices have improved immunity to single event effect (see) and have been characterized for useful performance with linear energy transfer (let) up to 90mev/(mg/cm 2 ). their combination of very low r ds(on) and faster switching times reduces power loss and increases power density in today?s high speed switching applications such as dc-dc converters and motor controllers. these devices retain all of the well established advantages of mosfets such as voltage control, ease of paralleling and temperature stability of electrical parameters. product summary part number radiation level r ds(on) i d IRHMS67260 100k rads (si) 0.029 ? 45a* irhms63260 300k rads (si) 0.029 ? 45a* 2n7584t1 IRHMS67260 * current is limited by package pd-94667f
IRHMS67260, 2n7584t1 pre-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 45* i sm pulse source current (body diode) ? ? 180 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 45a, v gs = 0v t rr reverse recovery time ? ? 640 ns t j = 25c, i f = 45a, di/dt 100a/ s q rr reverse recovery charge ? ? 10.5 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.60 r thcs case-to-sink ? 0.21 ? c/w r thja junction-to-ambient ? ? 48 typical socket mount note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.21 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.029 ? v gs = 12v, i d = 35a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma ? v gs(th) / ? t j gate threshold voltage coefficient ? -11.2 ? mv/c g fs forward transconductance 40 ? ? s v ds = 25v, i ds = 35a i dss zero gate voltage drain current ? ? 10 v ds = 160v, v gs = 0v ??25 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 240 v gs = 12v, i d = 45a q gs gate-to-source charge ? ? 65 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 60 t d (on) turn-on delay time ? ? 40 v dd = 100v, i d = 45a, t r rise time ? ? 60 v gs = 12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 70 t f fall time ? ? 30 l s + l d total inductance ? 6.8 ? ciss input capacitance ? 8045 ? v gs = 0v, v ds = 25v c oss output capacitance ? 953 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 14 ? na nh ns a measured from drain lead ( 6mm / 0.025 in from package ) to source lead ( 6mm/ 0.025 in from package ) r g gate resistance 1.1 ? f = 1.0mhz, open drain * current is limited by package
www.irf.com 3 pre-irradiation IRHMS67260, 2n7584t1 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. typical single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page 1. part numbers IRHMS67260 and irhms63260 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 300k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 200 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 10 a v ds = 160v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-3) ? 0.029 ? v gs = 12v, i d = 35a r ds(on) static drain-to-sourcee on-state v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 45a resistance (low ohmic to-254aa) ? 0.029 ? v gs = 12v, i d = 35a 1 table 2. typical single event effect safe operating area let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs= @vgs= @vgs= @vgs= 0v -5v -10v -15v 42 5% 2450 5% 205 5% 200 200 200 190 61 5% 825 5% 66 7.5% 200 200 200 190 90 5% 1470 5% 80 5% 170 170 - - 0 50 100 150 200 250 -15 -10 -5 0 bias vgs (v) bias vds (v) let=42 5% let=61 5% let=90 5%
IRHMS67260, 2n7584t1 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 55.566.577.58 v gs , gate-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 45a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c v gs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v
www.irf.com 5 pre-irradiation IRHMS67260, 2n7584t1 fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 8. typical threshold voltage vs temperature fig 7. typical drain-to-source breakdown voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 190 200 210 220 230 240 250 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 0 10 20 30 40 50 60 70 80 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 150c v gs = 12v 4 8 12 16 20 v gs, gate -to -source voltage (v) 0 10 20 30 40 50 60 70 80 90 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 45a t j = 25c t j = 150c
IRHMS67260, 2n7584t1 pre-irradiation 6 www.irf.com fig 12. maximum drain current vs. case temperature fig 11. typical source-drain diode forward voltage fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d limited by package 1 10 100 0 2000 4000 6000 8000 10000 12000 14000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain volt age (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( ) v gs = 0v t j = 150c t j = 2 5 c 0 50 100 150 200 250 300 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 45a v = 40v ds v = 100v ds v = 160v ds 17
www.irf.com 7 pre-irradiation IRHMS67260, 2n7584t1 fig 15. maximum effective transient thermal impedance, junction-to-case fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 100 200 300 400 500 600 700 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 20a 28.5a 45a 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc
IRHMS67260, 2n7584t1 pre-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
1

0.1 % + -
www.irf.com 9 pre-irradiation IRHMS67260, 2n7584t1 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l = 0.34 mh peak i l = 45a, v gs = 12v i sd 45a, di/dt 840a/ s, v dd 200v, t j 150c footnotes: case outline and dimensions ?low-ohmic to-254aa ir world headquarters: 101 n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2014 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not es : pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.

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